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Electrical characteristic ( T

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BV

DSS

Drain to source breakdown voltage

V

400

-

-

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

I

-

0.54

-

I

DSS

Drain to source leakage current

V

-

-

1

uA

V

-

-

20

uA

I

GSS

Gate to source leakage current, forward

V

-

-

100

nA

V

-

-

-100

nA

Gate to source leakage current, reverse

On characteristics

V

GS(TH)

Gate threshold voltage

V

2.0

-

4.0

V

R

DS(ON)

Drain to source on state resistance

V

0.8

1.0

Ω

Dynamic characteristics

C

iss

Input capacitance

V

570

750

pF

C

oss

Output capacitance

160

215

C

rss

Reverse transfer capacitance

30

40

t

d(on)

Turn on delay time

V

28

36

ns

tr

Rising time

74

96

t

d(off)

Turn off delay time

128

230

t

f

Fall time

30

50

Q

g

Total gate charge

V

32

42

nC

Q

gs

Gate-source charge

4

Q

gd

Gate-drain charge

10

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

S

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

-

-

6.5

A

I

SM

Pulsed source current

-

-

26

A

V

SD

Diode forward voltage drop.

I

-

-

1.5

V

T

rr

Reverse recovery time

I

dI

-

320

-

ns

Q

rr

Breakdown voltage temperature

-

1.46

-

uC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

L = 19.4mH, I

3.

I

4.

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%

5.

Essentially independent of operating temperature.

SAMWIN

2/7

SW730