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Fig. 1. On-state characteristics

Fig. 2. Transfer characteristics

Fig. 3. On-resistance variation vs.

drain current and gate voltage

Fig. 5. Capacitance characteristics

(Non-Repetitive)

Fig. 6. Gate charge characteristics

Fig. 4. On state current vs.

diode forward voltage

3/7

2

3

4

5

6

7

8

9

10

10

-1

10

0

10

1

V

GS

, Gate-Source Voltage [V]

150

25

-55

،ط Notes :

1. V

DS

= 50V

2. 250¥ىs Pulse Test

0

5

10

15

20

25

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I

D

, Drain Current [A]

V

GS

= 20V

V

GS

= 10V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

V

SD

, Source-Drain Voltage [V]

،ط Notes :

1. V

GS

= 0V

2. 250¥ىs Pulse Test

150،ة

25،ة

0

5

10

15

20

25

30

35

40

45

50

0

500

1000

1500

2000

2500

3000

C

iss

=C

gs

+C

gd

(C

ds

=shorted)

C

oss

=C

ds

+C

gd

C

rss

=C

gd

*. Notes :

1. V

GS

= 0V

2. f=1MHz

C

iss

C

oss

C

rss

V

DS

, Drain-Source Voltage [V]

0

10

20

30

40

0

2

4

6

8

10

12

V

DS

= 250V

V

DS

= 320V

*. Note : I

D

= 10 A

Q

G

, Total Gate Charge [nC]

10

0

10

1

10

0

10

1

*. Notes :

1. 250us Pulse Test

2. T

C

= 25

O

C

V

DS

, Drain-Source Voltage [V]

Top :

15V

10V

9V

8V

6V

Bottom : 5.5V

SAMWIN

SW740