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SW2N60 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW2N60
功能描述  N-channel MOSFET (TO-251 , TO-252)
PDF  7 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW2N60 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
600
-
-
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
-
0.65
-
V/oC
I
DSS
Drain to source leakage current
V
DS=600V, VGS=0V
-
-
1
uA
V
DS=480V, TC=125
oC
-
-
10
uA
I
GSS
Gate to source leakage current, forward
V
GS=30V, VDS=0V
-
-
100
nA
V
GS=-30V, VDS=0V
-
-
-100
nA
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2.0
-
4.0
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID = 1A
4
5
Ω
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
-
520
pF
C
oss
Output capacitance
-
50
C
rss
Reverse transfer capacitance
-
12
t
d(on)
Turn on delay time
V
DS=300V, ID=2.0A, RG=25Ω
-
35
ns
tr
Rising time
-
55
t
d(off)
Turn off delay time
-
70
t
f
Fall time
-
40
Q
g
Total gate charge
V
DS=480V, VGS=10V, ID=2.0A
-
7.5
20
nC
Q
gs
Gate-source charge
-
1.2
-
Q
gd
Gate-drain charge
-
3
-
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
-
-
2.0
A
I
SM
Pulsed source current
-
-
8.0
A
V
SD
Diode forward voltage drop.
I
S=2.0A, VGS=0V
-
-
1.5
V
T
rr
Reverse recovery time
I
S=2.0A, VGS=0V,
dI
F/dt=100A/us
-
590
-
ns
Q
rr
Breakdown voltage temperature
-
1.0
-
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 75mH, I
AS = 2.0A, VDD = 50V, RG=50Ω, Starting TJ = 25
oC
3.
I
SD ≤ 2.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
SW2N60
SAMWIN
2/7



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