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Features

■ High ruggedness

■ R

■ Gate Charge (Typ 19nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

V

DSS

Drain to Source Voltage

650

V

I

D

Continuous Drain Current (@T

4.0

A

Continuous Drain Current (@T

2.6

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

143

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

10.6

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

54

W

0.43

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

2.3

R

thja

Thermal resistance, Junction to ambient

83

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 4.0A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-251

TO-252

SW4N65

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N65

SW4N65

TO-251

TUBE

2

SW D 4N65

SW4N65

TO-252

REEL

Order Codes