2SB1190 datasheet(2/3 Pages) ISC

部件名	2SB1190

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1190

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-5mA , B=0

-150

V(BR)EBO

Emitter-base breakdown voltage

IE=-0.5mA ,IC=0

-6

VCEsat

Collector-emitter saturation voltage

IC=-500mA; IB=-50mA

-1.0

VBE

Base-emitter on voltage

IC=-300mA ; VCE=-10V

-1.0

ICBO

Collector cut-off current

VCB=-200V; IE=0

-50

μA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-50

μA

hFE-1

DC current gain

IC=-100mA ; VCE=-10V

240

hFE-2

DC current gain

IC=-300mA ; VCE=-10V

COB

Output capacitance

IE=0 ; VCB=-10V,f=1MHz

Transition frequency

IC=-100mA ; VCE=-10V

MHz

hFE-1 Classifications

60-140

100-240

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