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Features

■ High ruggedness

■ R

■ Gate Charge (Typ 35nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to

DC converter block, high efficiency switch mode power supplies, power factor

correction, electronic lamp ballast based on half bridge.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

500

V

I

D

Continuous Drain Current (@T

8.5

A

Continuous Drain Current (@T

5.5

A

I

DM

Drain current pulsed

(note 1)

34

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

790

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

13.7

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5.0

V/ns

P

D

Total power dissipation (@T

125

W

1.1

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

1.0

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 8.5A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

TO-220

SW840A

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 840A

SW840A

TO-220

TUBE

Order Codes