B1383 datasheet(1/2 Pages) ISC

部件名	B1383

功能描述	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1383

DESCRIPTION

·High DC Current Gain

: hFE= 2000(Min.)@ IC= -12A, VCE= -4V

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -120V(Min)

·Complement to Type 2SD2083

APPLICATIONS

·Designed for driver of solenoid, motor and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-25

A

ICM

Collector Current-Peak

-40

A

IB

B

Base Current- Continuous

-2

A

PC

Collector Power Dissipation

@TC=25℃

120

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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