2SB1647 datasheet(2/3 Pages) ISC

部件名	2SB1647

功能描述	Silicon PNP Darlington Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

2SB1647

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-30mA ;IB=0

-150

VCEsat

Collector-emitter saturation voltage

IC=-10A ;IB=-10mA

-2.5

VBEsat

Base-emitter saturation voltage

IC=-10A ;IB=-10mA

-3.0

ICBO

Collector cut-off current

VCB=-150V; IE=0

-100

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-100

μA

hFE

DC current gain

IC=-10A ; VCE=-4V

5000

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

320

Transition frequency

IC=-2A ; VCE=-12V

MHz

Switching times

ton

Turn-on time

0.7

μs

Storage time

1.6

μs

Fall time

IC=-10A;RL=4Ω

IB1=- IB2=-10mA

VCC=-40V

1.1

μs

hFE Classifications

5000-12000

6500-20000

15000-30000

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