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2SC1162 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1162 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 35 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.2A(Pulse test) 1.0 V VBE Base-emitter on voltage IC=1.5A ; VCE=2V(Pulse test) 1.5 V ICBO Collector cut-off current VCB=35V; IE=0 20 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 60 320 hFE-2 DC current gain IC=1.5A ; VCE=2V(Pulse test) 20 fT Transition frequency IC=0.2A ; VCE=2V(Pulse test) 180 MHz hFE-1 Classifications B C D 60-120 100-200 160-320 |
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