B40C800DM thru B380C800DM

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Vishay Semiconductors

Revision: 19-Aug-11

3

Document Number: 88533

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 4 - Typical Forward Characteristics Per Diode

Fig. 5 - Typical Reverse Leakage Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0

10

100

0

10

20

30

40

50

Number of Cycles at 50 Hz

T

10 ms Single Sine-Wave

1.0 Cycle

0.4

0.8

1.2

10

1

0.1

0.01

0.6

1.0

1.4

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

Percent of Rated Peak Reverse Voltage (%)

T

T

1

10

100

1

10

100

T

f = 1.0 MHz

V

Reverse Voltage (V)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.013 (0.33)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

0.075 (1.90)

0.055 (1.39)

0.205 (5.2)

0.195 (5.0)

0.080 (2.03)

0.050 (1.27)

0.185 (4.69)

0.150 (3.81)

0.335 (8.51)

0.320 (8.12)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.023 (0.58)

0.018 (0.46)