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2SC2518 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SC2518
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SC2518 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC2518 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC2518 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2518
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 2A; IB= 0.4A, L=1mH
B
400
V
VCEX(SUS)-1
Collector-Emitter Sustaining Voltage
IC= 2A ; IB1=-IB2= 0.4A,
L=180μH,clamped
450
V
VCEX(SUS)-2
Collector-Emitter Sustaining Voltage
IC= 4A; IB1= 0.8A; IB2= -0.4A,
L= 180μH,clamped
400
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
10
μA
ICER
Collector Cutoff Current
VCE= 400V; RBE= 51Ω, Ta=125℃
1.0
mA
ICEX
Collector Cutoff Current
VCE= 400V; VBE(off)= -1.5V
VCE= 400V; VBE(off)= -1.5V, Ta=125℃
10
1.0
μA
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
10
μA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
20
80
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
10
Switching times
ton
Turn-on Time
1.0
μs
tstg
Storage Time
2.5
μs
tf
Fall Time
IC= 2A ,RL= 75Ω,
IB1= -IB2= 0.4A,VCC≈ 150V
0.7
μs
hFE-2 Classifications
M
L
K
20-40
30-60
40-80
isc Website：www.iscsemi.cn
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