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2SC2555 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2555 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2555 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector -emitter breakdown voltage IC=10mA ,IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 500 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 10 Switching times tr Rise time 1.0 μs tstg Storage time 2.5 μs tf Fall time VCC≈200V; IC=4A IB1=-IB2=0.4A RL=50Ω 1.0 μs |
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