EC3H02BA

No. A1064-1/5

www.semiconductor-sanyo.com/network

Ordering number : ENA1064B

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

device, the customer should always evaluate and test devices mounted in the customer

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

21209 MS IM TC-00001842 / 70908 TI IM TC-00001504 / 42308AB TI IM TC-00001344

SANYO Semiconductors

DATA SHEET

EC3H02BA

NPN Epitaxial Planar Silicon Transistor

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

Features

•

Low noise : NF=1.0dB typ (f=1GHz).

•

High gain :

⏐S21e⏐

•

High cutoff frequency : fT=7GHz typ.

•

Ultrasmall (1006size), slim (0.5mm) leadless package.

•

Halogen free compliance (UL94 HB).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to- Base Voltage

VCBO

20

V

Collector-to-Emitter Voltage

VCEO

10

V

Emitter-to-Base Voltage

VEBO

2V

Collector Current

IC

70

mA

Collector Dissipation

PC

100

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=10V, IE=0A

1.0

μA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0A

10

μA

DC Current Gain

hFE

VCE=5V, IC=20mA

120

180

Gain-Bandwidth Product

fT1VCE=5V, IC=20mA

5

7

GHz

Output Capacitance

Cob

VCB=10V, f=1MHz

0.7

1.2

pF

Reverse Transfer Capacitance

Cre

VCB=10V, f=1MHz

0.45

pF

Continued on next page.

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