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FSS294 数据表(PDF) 2 Page - Sanyo Semicon Device

部件名 FSS294
功能描述  General-Purpose Switching Device Applications
PDF  4 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

FSS294 数据表(HTML) 2 Page - Sanyo Semicon Device

  FSS294 Datasheet HTML 1Page - Sanyo Semicon Device FSS294 Datasheet HTML 2Page - Sanyo Semicon Device FSS294 Datasheet HTML 3Page - Sanyo Semicon Device FSS294 Datasheet HTML 4Page - Sanyo Semicon Device  
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FSS294
No.8937-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=40V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=13A
11
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=13A, VGS=10V
7.8
10.2
mΩ
RDS(on)2
ID=6.5A, VGS=4.5V
12
17
mΩ
RDS(on)3
ID=6.5A, VGS=4V
15.5
22
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
2650
pF
Output Capacitance
Coss
320
pF
Reverse Transfer Capacitance
Crss
235
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
27
ns
Rise Time
tr
180
ns
Turn-OFF Delay Time
td(off)
154
ns
Fall Time
tf
118
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=13A
52
nC
Gate-to-Source Charge
Qgs
9.6
nC
Gate-to-Drain “Miller” Charge
Qgd
10.5
nC
Diode Forward Voltage
VSD
IS=13A, VGS=0V
0.81
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=13A
RL=1.54Ω
VDD=20V
VOUT
FSS294
VIN
10V
0V
VIN
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
IT16564
IT16565
0
4.0
0
0
13
12
10
8
4
6
2
1.0
0.2
0.3
0.4
0.1
0.5
0.6
0.7
0.8
0.9
0
20
14
18
16
1.0
0.5
2.0
3.0
1.5
2.5
3.5
12
10
8
6
2
4
VGS=2.5V
VDS=10V
3.0V
Ta=25°C



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