2SC2660 datasheet(2/3 Pages) ISC

部件名	2SC2660

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2660 2SC2660A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEsat

Collector-emitter saturation voltage

IC=0.5A ;IB=50m A

1.0

VBE

Base-emitter on voltage

IC=0.4A ; VCE=10V

1.0

2SC2660

150

V(BR)CEO

Collector-emitter

breakdown voltage

2SC2660A

IC=5mA ;IB=0

180

V(BR)CBO

Collector-base breakdown voltage

IC=0.5mA ;IE=0

200

V(BR)EBO

Emitter-base breakdown voltage

IE=0.5mA ;IC=0

ICBO

Collector cut-off current

VCB=200V;IE=0

μA

IEBO

Emitter cut-off current

VEB=4V; IC=0

μA

hFE-1

DC current gain

IC=0.15A ; VCE=10V

240

hFE-2

DC current gain

IC=0.4A ; VCE=10V

hFE-1 classifications

60-140

100-240

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