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2SC3264 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3264 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3264 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 230V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE DC Current Gain IC= 5A; VCE= 4V 50 140 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 250 pF fT Current-Gain—Bandwidth Product IE= -2A; VCE= 12V 60 MHz Switching times ton Turn-on Time 0.3 μs tstg Storage Time 2.4 μs tf Fall Time IC= 5A ,RL= 12Ω, IB1= -IB2= 0.5A,VCC= 60V 0.5 μs hFE Classifications O Y 50-100 70-140 isc Website:www.iscsemi.cn 2 |
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