2SC3376 datasheet(2/2 Pages) ISC

部件名	2SC3376

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3376

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

800

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

900

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 0.8A; IB= 0.16A

0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= 0.8A; IB= 0.16A

1.2

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

1.0

hFE

DC Current Gain

IC= 0.8A; VCE= 5V

Switching Times; Resistive Load

Rise Time

1.0

μs

Storage Time

4.0

μs

Fall Time

IB1= 0.08A; IB2= -0.2A;

VCC≈ 400V; RL= 500Ω

1.0

μs

isc Website：www.iscsemi.cn

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