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2SC3446 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SC3446
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SC3446 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC3446 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC3446 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3446
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
800
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
500
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE-1
DC Current Gain
IC= 0.3A; VCE= 5V
15
50
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.3A; VCE= 10V
18
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
50
pF
Switching Times
ton
Turn-on Time
0.5
μs
tstg
Storage Time
3.0
μs
tf
Fall Time
IC= 2A, IB1= 0.4A; IB2= -0.8A
RL= 100Ω; VCC= 200V
0.3
μs
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
isc Website：www.iscsemi.cn
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