2SC3465 datasheet(2/3 Pages) ISC

部件名	2SC3465

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3465

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=5mA; RBE=∞

800

V(BR)CBO

Collector-base breakdown voltage

IC=1mA; IE=0;

1100

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA; IC=0;

VCEsat

Collector-emitter saturation voltage

IC=6A;IB=1.2A

2.0

VBEsat

Base-emitter saturation voltage

IC=6A;IB=1.2A

1.5

ICBO

Collector cut-off current

VCB=800V;IE=0

μA

IEBO

Emitter cut-off current

VEB=7V;IC=0

μA

hFE-1

DC current gain

IC=0.8A ;VCE=5V

hFE-2

DC current gain

IC=4A ;VCE=5V

Transition freuquency

IC=0.8A ;VCE=10V

MHz

COB

Collector output capacitance

IE=0 ;VCB=10V,f=1MHz

240

hFE-1 classifications

10-20

15-30

20-40

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