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2SC3783 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3783 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3783 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 3A; VCE= 5V 10 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 3.5 μs tf Fall Time VCC≈ 400V, IB1= 0.3A; IB2= -0.8A RL= 133Ω;PW=20μs; Duty Cycle≤1% 1.0 μs isc Website:www.iscsemi.cn 2 |
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