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2SC3795A 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3795A 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3795 2SC3795A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH 500 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V 2SC3795 VCB=800V; IE=0 ICBO Collector cut-off current 2SC3795A VCB=900V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V 8 MHz Switching times 2SC3795 1.0 ton Turn-on time 2SC3795A 1.2 μs ts Storage time 3.0 μs 2SC3795 1.0 tf Fall time 2SC3795A IC=3A; IB1=- IB2=0.6A VCC=200V 1.2 μs |
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