TCST1202 datasheet(2/11 Pages) VISHAY

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Document Number: 83751

Rev. 1.7, 17-Aug-09

CNY70

Vishay Semiconductors

Reflective Optical Sensor with

Transistor Output

Note

(1) Tamb = 25 °C, unless otherwise specified

ABSOLUTE MAXIMUM RATINGS

Fig. 1 - Power Dissipation vs. Ambient Temperature

Notes

(1) Tamb = 25 °C, unless otherwise specified

(2) Measured with the "Kodak neutral test card", white side with 90 % diffuse reflectance

(3) Measured without reflecting medium

OUTPUT (DETECTOR)

Collector emitter voltage

VCEO

Emitter collector voltage

VECO

Collector current

Power dissipation

Tamb ≤ 25 °C

100

Junction temperature

100

°C

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

100

200

300

95 11071

Tamb - Ambient Temperature (°C)

IR - diode

Coupled device

Phototransistor

100

BASIC CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

COUPLER

Collector current

VCE = 5 V, IF = 20 mA,

d = 0.3 mm (figure 1)

IC (2)

0.3

1.0

Cross talk current

VCE = 5 V, IF = 20 mA, (figure 2)

ICX (3)

600

Collector emitter saturation

voltage

IF = 20 mA, IC = 0.1 mA,

d = 0.3 mm (figure 1)

VCEsat (2)

0.3

INPUT (EMITTER)

Forward voltage

IF = 50 mA

1.25

1.6

Radiant intensity

IF = 50 mA, tp = 20 ms

7.5

mW/sr

Peak wavelength

IF = 100 mA

940

Virtual source diameter

Method: 63 % encircled energy

1.2

OUTPUT (DETECTOR)

Collector emitter voltage

IC = 1 mA

VCEO

Emitter collector voltage

IE = 100 µA

VECO

Collector dark current

VCE = 20 V, IF = 0 A, E = 0 lx

ICEO

200

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