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2SC3970 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3970 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3970 2SC3970A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 500 V VCEsat Collector-emitter saturation voltage IC=0.6A; IB=0.17A 1.0 V VBEsat Base-emitter saturation voltage IC=0.6A; IB=0.17A 1.5 V 2SC3970 VCB=800V; IE=0 ICBO Collector cut-off current 2SC3970A VCB=900V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=0.6A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=0.6A; IB1=0.17A IB2=-0.34A;VCC=200V 0.3 μs |
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