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2SC4460 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SC4460
功能描述  Silicon NPN Power Transistors
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SC4460 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4460 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4460 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC4460 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SC4460 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC4460
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
800
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=∞
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEX(SUS)
Collector-emitter sustaining voltage
IC=5A;IB1=2A;
IB2=-2A;L=500μH
500
V
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=1.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=6A;IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1.2A ; VCE=5V
15
50
hFE-2
DC current gain
IC=6A ; VCE=5V
8
fT
Transition frequency
IC=1.2A ; VCE=10V
18
MHz
COB
Output capacitance
VCB=10V;f=1MHz
160
pF
Switching times
ton
Turn-on time
0.5
μs
tstg
Storage time
3.0
μs
tf
Fall time
IC=5IB1=-2.5IB2=7A;
RL=28.6Ω
VCC=200V
0.3
μs
hFE-1 classifications
L
M
N
15-30
20-40
30-50



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