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Document Number: 71397

S11-0179-Rev. F, 07-Feb-11

Vishay Siliconix

DG411L, DG412L, DG413L

TEST CIRCUITS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Figure 4. Charge Injection

10 nF

D

V+

S

V-

3 V

IN

GND

OFF

ON

OFF

OFF

ON

OFF

Q =

by sense of switch.

V-

V+

Figure 5. Crosstalk

0 V, 2.4 V

C = RF bypass

0 V, 2.4 V

50

Ω

V+

GND

V -

NC

C

CC

V+

V-

Figure 6. Off-Isolation

50

Ω

D

0 V, 2.4 V

V+

GND

V-

C

Off Isolation = 20 log

IN

C

S

C

C = RF Bypass

V-

V+

Figure 7. Source/Drain Capacitances

D

IN

S

V+

GND

V -

C

0 V, 2.4 V

Meter

HP4192A

Impedance

Analyzer

or Equivalent

CC

V-