2SC4550 datasheet(1/2 Pages) ISC

部件名	2SC4550

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4550

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V(Min)

·High DC Current Gain-

: hFE= 100(Min)@ (VCE= 2V , IC= 1.5A)

·Low Saturation Voltage-

: VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A)

B

APPLICATIONS

·Designed for use as a driver in DC/DC converters and

actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current-Continuous

7.0

A

ICM

Collector Current-Pulse

14

A

IB

B

Base Current-Continuous

3.5

A

Total Power Dissipation @TC=25℃

30

PT

Total Power Dissipation @Ta=25℃

2.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

类似零件编号 - 2SC4550

制造商	部件名	数据表	功能描述
NEC	2SC4550	135Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Savantic, Inc.	2SC4550	260Kb / 4P	Silicon NPN Power Transistors
Renesas Technology Corp	2SC4550	259Kb / 8P	SILICON POWER TRANSISTOR
Comset Semiconductor	2SC4550	96Kb / 3P	SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Savantic, Inc.	2SC4550	262Kb / 4P	Silicon NPN Power Transistors

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