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2SC4583 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4583 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 1.5A; VCE= 5V 8 hFE-2 DC Current Gain IC= 1mA; VCE= 5V 7 fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 10V 8 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 3.5 μs tf Fall Time IC= 1.5A, IB1= 0.3A; IB2= -0.6A; RL= 167Ω; VBB2= 4V 0.3 μs isc Website:www.iscsemi.cn 2 |
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