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2SC4757 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4757 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 4 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1 3 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 175 pF Switching times Resistive load tstg Storage Time 2.5 μs tf Fall Time ICP= 5A , IB1= 1A ; IB2= -2A RL=39Ω 0.2 μs isc Website:www.iscsemi.cn 2 |
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