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2SC5002 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5002 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5002 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=5A;IB=1.2A 1.5 V ICBO1 Collector cut-off current VCB=1200V ;IE=0 100 μ A ICBO2 Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 100 μ A hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 4 9 fT Transition frequency IE=-0.5A ; VCE=12V 4 MHz COB Output capacitance VCB=10V;f=1MHz 100 pF Switching times tstg Storage time 4.0 μ s tf Fall time IC=4A;IB1=0.8A; IB2=-1.6A;RL=50Ω VCC=200V 0.2 μ s |
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