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2SC5071 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5071 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5071 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A 0.5 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=7A ; VCE=4V 10 30 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 105 pF fT Transition frequency IE=-1A ; VCE=12V 10 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=7A;RL=28.5Ω IB1=0.7A; IB2=-1.4A VCC=200V 0.5 μs |
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