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2SC5149 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5149 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5149 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for medium resolution display color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse 16 A IB B Base Current- Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
类似零件编号 - 2SC5149 |
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类似说明 - 2SC5149 |
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