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2SC6011 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC6011 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC6011 200 VCBO Collector-Base Voltage 2SC6011A 230 V 2SC6011 200 VCEO Collector-Emitter Voltage 2SC6011A 230 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 160 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn |
类似零件编号 - 2SC6011 |
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类似说明 - 2SC6011 |
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