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2SD525 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD525 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD525 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 240 hFE-2 DC current gain IC=4A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 12 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 100 pF hFE-1 classifications R O Y 40-80 70-140 120-240 |
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