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2SD649 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SD649
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SD649 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD649 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD649 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
7.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
1.5
V
VCB= 750V ; IE= 0
100
μA
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
1
mA
hFE
DC Current Gain
IC= 3A; VCE= 10V
4
12
tf
Fall Time
1
μs
tstg
Storage Time
IC= 3A, IBend= 1A, LB= 20μH
13
μs
isc Website：www.iscsemi.cn
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