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2SD718 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD718 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD718 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Base-emitter breakdown voltage IC=50mA ,IB=0 120 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V 55 160 fT Transition frequency IC=1A ; VCE=5V 12 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 170 pF hFE Classifications R O 55-110 80-160 |
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