| 数据搜索系统,热门电子元器件搜索 |
|
2SD834 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD834 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD834 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1A ; IB=0 180 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A;IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A;IB=2mA 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=10V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=2V 1500 Switching times ton Turn-on time 1.7 μs ts Storage time 15.0 μs tf Fall time IC=2A;IB1=-IB2=5mA; RL=10Ω PW=20μs;Duty≤2% 18.0 μs |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |