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2SD860 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD860 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD860 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 10V 1.5 V ICEO Collector Cutoff Current VCE= 150V; IB= 0 1 mA ICES Collector Cutoff Current VCE= 350V; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 10V 40 250 hFE-2 DC Current Gain IC= 2A; VCE= 10V 10 Switching Times ton Turn-On Time 0.2 μs toff Turn-Off Time IC= 2A; IB1= -IB2= 0.2A 2.0 μs hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website:www.iscsemi.cn 2 |
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