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2SD1275 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1275 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1275 2SD1275A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1275 60 V(BR)CEO Collector-emitter breakdown voltage 2SD1275A IC=30mA , IB=0 80 V VCEsat Collector-emitter saturation voltage IC=2A; IB=8mA 2.5 V VBE Base-emitter voltage VCE=4V; IC=2A 2.8 V 2SD1275 VCB=60V; IE=0 ICBO Collector cut-off current 2SD1275A VCB=80V; IE=0 1.0 mA 2SD1275 VCE=30V; IB=0 ICEO Collector cut-off current 2SD1275A VCE=40V; IB=0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=1A ; VCE=4V 1000 hFE-2 DC current gain IC=2A ; VCE=4V 2000 10000 fT Transition frequency IC=0.5A; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 4.0 μs tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 1.0 μs hFE-2 Classifications Q R 2000-5000 4000-10000 |
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