2SD1296 datasheet(1/3 Pages) ISC

部件名	2SD1296

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1296

DESCRIPTION

・

With TO-3PN package

・

High DC current gain

・

Low saturation voltage

APPLICATIONS

・

For audio frequency power amplifier

and low speed high current switching

industrial use

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VCBO

Collector-base voltage

Open emitter

150

V

VCEO

Collector-emitter voltage

Open base

100

V

VEBO

Emitter-base voltage

Open collector

8

V

IC

Collector current

15

A

ICM

Collector current-peak

30

A

TC=25℃

100

PT

Total power dissipation

Ta=25℃

3.0

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3PN) and symbol

类似零件编号 - 2SD1296

制造商	部件名	数据表	功能描述
NEC	2SD1296	151Kb / 1P	Darlington Power Transistors
Savantic, Inc.	2SD1296	147Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SD1296	88Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SD1296	148Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SD1296-3PN	88Kb / 3P	Silicon NPN Power Transistors

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类似说明 - 2SD1296

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