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2SD1530 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1530 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 1.2 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 2V 45 hFE-2 DC Current Gain IC= 1A; VCE= 2V 60 260 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 10MHz 25 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 1.5 μs tf Fall Time IC= 2A; IB1= -IB2= 0.1A; VCC= 50V 0.5 μs hFE-2 classifications R Q P 60-120 90-180 130-260 isc Website:www.iscsemi.cn 2 |
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