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2SD1608 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1608 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1608 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA B 3.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 100V; IB= 0 10 μA hFE DC Current Gain IC= 4A; VCE= 3V 1000 20000 Switching times ton Turn-on Time 0.7 μs tstg Storage Time 6.0 μs tf Fall Time IC= 4A, IB1= -IB2= 8mA 2.0 μs isc Website:www.iscsemi.cn 2 |
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