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2SD1670 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1670 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 10A; VCE= 2V 1000 30000 Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 5.0 μs tf Fall Time VCC≈ 50V, RL= 5Ω, IC= 10A; IB1= -IB2= 25mA, 2.0 μs hFE-1 Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 isc Website:www.iscsemi.cn 2 |
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