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2SD1692 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1692 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; IB= 3mA, L= 1.0mH B 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 1.0 mA hFE-1 DC Current Gain IC= 1.5 A; VCE= 2V 2000 20000 hFE-2 DC Current Gain IC= 3 A; VCE= 2V 1000 Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 2.0 μs tf Fall Time IC= 1.5A, IB1= -IB2= 1.5mA; RL= 27Ω; VCC≈ 40V 1.0 μs hFE-1 Classifications M L K 2000-5000 4000-12000 8000-20000 isc Website:www.iscsemi.cn |
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