| 数据搜索系统,热门电子元器件搜索 |
|
2SD2257 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD2257 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2257 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 1.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=8V; IC=0 0.8 4.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=2A ; VCE=2V 2000 VECF Diode forward voltage IE=1A 2.0 V Switching times ton Turn-on time 0.5 μs ts Storage time 2.0 μs tf Fall time IB1=-IB2=1.5mA VCC=30V ,RL=20Ω Duty cycle≤1% 0.5 μs |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |