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3CD6D 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3CD6D 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 3CD6D CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -110 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IB=0 -4 V VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.5A -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-2.5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-110V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-110V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE DC current gain IC=-2.5A ; VCE=-10V 10 180 |
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