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3DD7D 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3DD7D 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 3DD7D CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=3mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=3mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=2mA ; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=3.75A ;IB=0.38 A 1.2 V ICEO Collector cut-off current VCE=30V; IB=0 1.0 mA hFE DC current gain IC=3.75A ; VCE=10V 15 180 hFE classifications 红 橙 黄 绿 蓝 紫 15-25 25-40 40-55 55-80 80-120 120-180 |
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