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BD246 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BD246
功能描述  isc Silicon PNP Power Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BD246 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD246 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD246 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD246 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD246/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD246
-45
BD246A
-60
BD246B
-80
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD246C
IC= -30mA ;IB=0
B
-100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
B
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -2.5A
-4.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= -3A ; VCE= -4V
-1.6
V
VBE(on)-2
Base-Emitter On Voltage
IC= -10A ; VCE= -4V
-3.0
V
BD246
VCE= -55V; VBE= 0
BD246A
VCE= -70V; VBE= 0
BD246B
VCE= -90V; VBE= 0
ICES
Collector
Cutoff Current
BD246C
VCE= -115V; VBE= 0
-0.4
mA
BD246/A
VCE= -30V;IB= 0
ICEO
Collector
Cutoff Current
BD246B/C
VCE= -60V;IB= 0
-0.7
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -1A ; VCE= -4V
40
hFE-2
DC Current Gain
IC= -3A ; VCE= -4V
20
hFE-3
DC Current Gain
IC= -10A ; VCE= -4V
4
fT
Current-Gain—Bandwidth Product
IC= -0.5A;VCE= -10V,ftest= 1.0MHz
3.0
MHz
Switching times
ton
Turn-on Time
0.2
μs
toff
Turn-off Time
IC= -1A; IB1= -IB2= -0.1A;
RL=20Ω; VBE(OFF)= 3.7V
0.8
μs
isc Website：www.iscsemi.cn
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