BD249 datasheet(1/3 Pages) ISC

部件名	BD249

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD249/A/B/C

DESCRIPTION

・With TO-3PN package

・Complement to type BD250/A/B/C

・125 W at 25°C case temperature

・25 A continuous collector current

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD249

45

BD249A

60

BD249B

80

VCEO

Collector-emitter voltage

BD249C

Open base

100

V

BD249

55

BD249A

70

BD249B

90

VCBO

Collector-base voltage

BD249C

Open base

115

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

25

A

ICM

Collector current-peak

40

A

IB

Base current

5

A

PC

Collector power dissipation

TC=25℃

125

W

Tj

Junction temperature

-65~150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.0

℃/W

Fig.1 simplified outline (TO-3PN) and symbol

类似零件编号 - BD249

制造商	部件名	数据表	功能描述
Mospec Semiconductor	BD249	131Kb / 3P	POWER TRANSISTORS(25A,125W)
Power Innovations Ltd	BD249	93Kb / 6P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD249	109Kb / 5P	NPN SILICON POWER TRANSISTORS
Savantic, Inc.	BD249	145Kb / 3P	Silicon NPN Power Transistors
Bourns Electronic Solut...	BD249	114Kb / 4P	NPN SILICON POWER TRANSISTORS

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类似说明 - BD249

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