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BD533 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD533 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BD533/535/537 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=2 A;IB=0.2 A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=6 A;IB=0.6 A 0.8 V VBE Base-emitter on voltage IC=2A ; VCE=2V 1.5 V BD533 VCB=45V; IE=0 BD535 VCB=60V; IE=0 ICBO Collector cut-off current BD537 VCB=80V; IE=0 0.1 mA BD533 VCE=45V; VBE=0 BD535 VCE=60V; VBE=0 ICES Collector cut-off current BD537 VCE=80V; VBE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA BD533/535 20 hFE-1 DC current gain BD537 IC=10mA ; VCE=5V 15 hFE-2 DC current gain IC=0.5A ; VCE=2V 40 Group: J 30 75 hFE-3 DC current gain (All device) Group: K IC=2A ; VCE=2V 40 100 Group: J 15 hFE-4 DC current gain (All device) Group: K IC=3A ; VCE=2V 20 fT Transition frequency IC=0.5A ; VCE=1V 3 12 MHz |
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