BD636 datasheet(1/2 Pages) ISC

部件名	BD636

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD636

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= -25mA

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min.)

·Complement to Type BD635

APPLICATIONS

·Designed for amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-2

A

ICM

Collector Current-Peak

-5

A

IB

B

Base Current-Continuous

-0.3

A

Collector Power Dissipation

@ Ta=25℃

2

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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